Table 5 Parameters \((n_{Si},n_{Ge})\) and \((k_{Si},k_{Ge})\) of the Vegard-like behavior at the photon energies of 1.96 eV and at 3.14 eV based on Eqs. (6) and (7).

From: Micro-combinatorial sampling of the optical properties of hydrogenated amorphous \(\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}\) for the entire range of compositions towards a database for optoelectronics

Sample

\(p_H/p = 0\)

\(p_H/p = 0.05\)

\(p_H/p = 0.1\)

\(p_H/p = 0.2\)

\((n_{Si},n_{Ge})\) @ 1.96eV

(4.93, 5.15)

(4.94, 5.15)

(4.75, 5.10)

(4.66, 5.10)

\((k_{Si},k_{Ge})\) @ 1.96eV

(0.87, 1.38)

(0.93, 1.44)

(0.79, 1.38)

(0.68, 1.26)

\((n_{Si},n_{Ge})\) @ 3.14eV

(4.69, 4.29)

(4.45, 4.09)

(4.39, 4.08)

(4.39, 4.17)

\((k_{Si},k_{Ge})\) @ 3.14 eV

(2.59, 2.92)

(2.68, 2.99)

(2.48, 2.91)

(2.39, 2.82)

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