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Figure 1

From: Metal–insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Figure 1

Lattice expansion in VO2 induced by interfacial oxygen vacancy migration. (a) X-ray diffraction (XRD) results on a VO2 thin film (deposited in 15 mTorr pO2) and VO2 thin films (deposited in 15 mTorr pO2) with TiO2 capping layers deposited under different pO2 of 10, 15, and 20 mTorr (denoted as LP, MP and HP, respectively). (b) c-axis lattice expansion, compared with a VO2 sample without capping layer indicated by the black dashline, as a function of deposition pO2 for the TiO2 capping layer.

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