Figure 3
From: Metal–insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface
Metal–insulator transition (MIT) tuned by interfacial oxygen vacancy migration. (a) Sheet resistance of TiO2/VO2 LP, MP and HP samples. (b) ON/OFF ratio (ratio of resistivity measured during cooling down and warming up cycle at Tc, i.e., 278, 287, and 295 K for LP, MP and HP samples, respectively) as a function of deposition pO2 of the TiO2 capping layers. Tc for each sample is defined by taking the average of transition temperatures for cooling down and warming up cycle.
