Figure 10

Evolution of transfer characteristics of IZTO TFTs prepared with (a) 19 nm after annealing time of 1 h at 350 °C and the different thicknesses: (b) 5, (c) 10, (d) 19, (e) 30, and (f) 50 nm after an annealing time of 1 h at 700 °C under PBS conditions. The PBS stress conditions are V_GS = V_TH + 20 V and V_DS = 5.1 V.