Figure 11
Evolution of transfer characteristics of IZTO TFTs prepared with (a) 19 nm film after annealing for 1 h at 350 °C and different thicknesses: (b) 5, (c) 10, (d) 19, (e) 30, and (f) 50 nm after an annealing time of 1 h at 700 °C under NBS conditions. The NBS stress conditions are VGS = VTH—20 V and VDS = 5.1 V.
