Figure 4 | Scientific Reports

Figure 4

From: Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

Figure 4

2D GIXD patterns of IZTO films of different thickness after annealing at 700 °C for (a–e) 1 and (f–j) 4 h; (a,f) 5, (b,g) 10, (c,h) 19, (d,i) 30, (e,j) 50 nm (the orange-, blue-, and green-colored symbol-marked peaks in h represent typical peaks of SnO2, Zn2SnO4, and In2O3, respectively). 2D GIXD patterns of IZTO films of different thickness after annealing at 700 °C for 2 h are also shown in Figure S10.

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