Figure 8
IDS-VGS transfer curves of FETs including IZTO films of different thickness after annealing at 700 °C for (a–e) 1 and (f–j) 4 h: (a,f) 5, (b,g) 10, (c,h) 19, (d,i) 30, and (e,j) 50 nm.
Figure 8 | Scientific Reports
IDS-VGS transfer curves of FETs including IZTO films of different thickness after annealing at 700 °C for (a–e) 1 and (f–j) 4 h: (a,f) 5, (b,g) 10, (c,h) 19, (d,i) 30, and (e,j) 50 nm.
