Table 2 The comparison of SiC etching results by different researchers.

From: High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Process characteristics

Process parameters

References

Vetch (µm/min)

Angle

W (W)

P (Pa)

Ubias

Gas mixture

2

 ~ 90°

2000

5

200 W

SF6/O2

26

1.28

 ~ 90°

800

0.75

− 300 V

SF6/O2

This work

 > 1

 ~ 98°

1000

0.67

300 W

SF6/O2/Ar

18

0.97

–

900

0.8

− 450 V

SF6/O2

34

0.94

 ~ 117°

1000

–

250 W

SF6/O2

19

0.6

 ~ 88°

700

0.67

− 400 V

SF6/O2

35

0.55

–

1500

0.8

− 300 V

SF6/O2

25

0.5

 ~ 98°

1000

0.67

120 W

SF6/O2/Ar

36

0.4

–

400

33

− 100 V

SF6/Ar

37

0.36

 ~ 85°

900

1.3

− 300 V

SF6

38

0.31

 ~ 90°

2000

2.7

200 W

SF6/O2

17

0.23

 ~ 100°

1000

0.5

− 160 V

Cl2/Ar

39

0.22

–

800

0.67

75 W

SF6/Ar

40

0.22

–

300

1.1

250 W

Cl2/Ar/BCl3

41

  1. The Ubias values are given in those units in which they were presented in the original work.
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