Table 1 Summary of the benefits brought by the use of patterned growth (SAVWE) for the transfer process of devices on host substrates.
Crystalline quality of epilayers | Crack free devices after release | Transfer yield of fully functional devices | Device performance (I–V and EL) | |
|---|---|---|---|---|
Patterned (SAVWE) | Good | Excellent (no cracks) | More than 90% | High |
Unpatterned | Fair | Medium (presence of cracks for large devices) | Less that 30% | Medium |
