Figure 1
From: Optoelectronic synapse using monolayer MoS2 field effect transistors
(a) Schematic diagram (not to scale) of back-gated monolayer MoS2 FET as optoelectronic synapse. (b) Representative SEM image of back-gated monolayer MoS2 FET. (c) AFM image of back-gated monolayer MoS2 FET. (d) ID–VG at VD = 1.0 V in dark and under light illumination (wavelength 450 nm and power 35.18 mW), showing the effect of photogenerated carriers. (e) Transient characteristics of the device showing change in the device conductance after applying a single light pulse (pulse duration 30 s) with varying intensity at VD = 1.0 V and VG = − 2.0 V. (f) Photo-switching characteristics of the monolayer MoS2 FET as photodetector at two different gate voltages under altering dark and light illumination.
