Figure 3
From: Optoelectronic synapse using monolayer MoS2 field effect transistors
Exfoliated monolayer MoS2 on SiO2 gate: (a) Gate-tunable potentiation and conductance retention, (b) Retention for 104 s, after applying 5 light pulses. Inset shows retention curve fitted with an exponential decay function. (c) Potentiation and zero conductance retention of exfoliated WSe2 on SiO2 gate at different gate voltages.
