Figure 4
From: Optoelectronic synapse using monolayer MoS2 field effect transistors
Schematic of CVD grown monolayer MoS2 FET in (a) ambient and (b) vacuum condition. (c) Comparison of ID–VG at VD = 1.0 V in ambient and in vacuum. (d) Comparison of potentiation and conductance retention at VD = 1.0 V and VG = VThreshold – 0.5 V of MoS2 FET in ambient and in vacuum.
