Figure 2
From: GaInP nanowire arrays for color conversion applications
FDTD simulation results mapping the optimal geometrical parameters of the embedded GaInP NW arrays with a height (H) of 1 µm for 450 nm source light. (a) Schematics for the simulated embedded GaInP NW structures. (b) Contour plot showing the calculated absorbance (FoM) at 450 nm for the investigated diameters (Ds) and periods (HexPs). The white dots indicate the highest obtained FoMs. Inset: absorbed power distribution at 450 nm wavelength of incident light. (c) Contour plot for the FoM values for GaInP NW arrays with an H of 1 μm, HexP of 500 nm, and D swept between 0–500 nm. (d) The optical response (total reflectance, transmittance, and absorbance) for optimized GaInP NW arrays embedded in PDMS.
