Figure 3
From: GaInP nanowire arrays for color conversion applications
Scanning electron microscopy (SEM) images of the fabricated GaInP structures. (a–c): micro-square (MS) and (d–f) tapered nanowire (NW) arrays. Representative top view and cross-section (with partially etched GaAs sacrificial layer) images for the structures still on the substrate are included (a,d) and (b,e), respectively. Top view images for the respective structures embedded in PDMS (after peel-off) are shown in (c) and (f).
