Figure 11
From: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
8 ALE cycles performed on SiO2 with the thickness variation followed by ellipsometry. (Experimental conditions: T = 20 °C/ − 90 °C, C4F8 flow: 20 s, 6 Pa, Ar purge: 3 s/3 s/4 s, < 1 Pa, Ar plasma: 1 min, 3 Pa, Psource = 400 W, Vbias = − 20 V, pumping: 15 s, < 1.0 × 10−3 Pa).
