Figure 3
From: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
Thickness variation measured by ellipsometry and 85 and 86 amu signals by QMS for 8 ALE cycles performed on SiO2, (inset) zoom on the second cycle. (Experimental conditions: T = − 120 °C, C4F8 flow: 10 s, 1.9 Pa, Ar purge: 30 s, 3.3 Pa, Ar plasma: 2 min, 3.3 Pa, Psource = 400 W, Vbias = − 20 V, pumping: 15 s, 0 Pa).
