Figure 4
From: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
C4F8 physisorption on SiO2 depending on setpoint temperature and monitored (a) by QMS by following C2F4+ ion peak intensity evolution and (b) by ellipsometry following the thickness variation , both versus time. (Experimental conditions: 1 min C4F8 flow, 3 Pa followed by a pumping step).
