Figure 7
From: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
C4F8 physisorption on SiO2 depending on pressure and monitored (a) by QMS by following C2F4+ ion peak intensity evolution and (b) by ellipsometry following the thickness variation , both versus time. (Experimental conditions: T = − 120 °C, C4F8 flow: 1 min followed by a pumping).
