Table 1 Electronic input parameters for the device simulations.

p-type (B) bulk

\(\tau _\text{n0 }\) = 2000 \(\upmu \text{s }\)

\(\rho _\text{b }\) = 0.9 \(\Omega \ \text{cm }\)

\(\tau _\text{p0 }\) = 20,000 \(\upmu \text{s }\)

n-type (P) bulk

\(\tau _\text{b }\) = 22,000 \(\upmu \text{s }\)

\(\rho _\text{b }\) = 3 \(\Omega \ \text{cm }\)

Pas. on p-Si (plan.)

\(J_\text{0 }\) = 1\(\text{fA } / \text{cm}^2\)

n.a.

Pas. on p-Si (text.)

\(J_\text{0 }\) = 3\(\text{fA } / \text{cm}^2\)

n.a.

Pas. on n-Si

\(J_\text{0 }\) = 3 \(\text{fA } / \text{cm}^2\)

n.a.

emitter P-diff.

\(J_\text{0 }\) = 22 \(\text{fA } / \text{cm}^2\)²⁵

\(R_\text{s }\) = 133 \(\Omega /\square\)²⁵

selective P-diff.

\(J_\text{0 }\) = 100 \(\text{fA } / \text{cm}^2\)

\(R_\text{s }\) = 95 \(\Omega /\square\)

emitter B-diff.

\(J_\text{0 }\) = 14 \(\text{fA } / \text{cm}^2\)²⁶

\(R_\text{s }\) = 135 \(\Omega /\square\)²⁶

selective B-diff.

\(J_\text{0 }\) = 110 \(\text{fA } / \text{cm}^2\)²⁷

\(R_\text{s }\) = 95 \(\Omega /\square\)²⁷

n-type POLO

\(J_\text{0 }\) = 3 \(\text{fA } / \text{cm}^2\)²²

\(R_\text{s }\) = 50 \(\Omega /\square\)

p-type POLO

\(J_\text{0 }\) = 5 \(\text{fA } / \text{cm}^2\)

\(R_\text{s }\) = 200 \(\Omega /\square\)

Ag on P cont.

\(J_\text{0 }\) = 1400 \(\text{fA } / \text{cm}^2\)

\(\rho _\text{c }\) = 1.5 \(\mathrm {m}\Omega \ \text{cm}^2\)

Al on Si cont.

\(J_\text{0 }\) = 400 \(\text{fA } / \text{cm}^2\)²⁸

\(\rho _\text{c }\) = 1.3 \(\mathrm {m}\Omega \ \text{cm}^2\)

Ag on B cont.

\(J_\text{0 }\) = 740 \(\text{fA } / \text{cm}^2\)²⁹

\(\rho _\text{c }\) = 2 \(\mathrm {m}\Omega \ \text{cm}^2\)³⁰

Ag on n-POLO cont.

Same as n-POLO

\(\rho _\text{c }\) = 0.9 \(\mathrm {m}\Omega \ \text{cm}^2\)

Ag on p-POLO cont.

Same as p-POLO³¹

\(\rho _\text{c }\) = 5 \(\mathrm {m}\Omega \ \text{cm}^2\)