Figure 5
From: Technology agnostic frequency characterization methodology for memristors
Simulated Nyquist plots of a double layer device, according to the inset equivalent model. In subfigure (a), the impact of a changing capacitance in one of the layers is shown. The separation between semicircles is closely related to the ratio of C1/C2 in this case. Different colour lines correspond to different values in the variable capacitor, shown in the equivalent circuit. In subfigure (b), the impact of changing Resistance A or Resistance B is shown. The capacitance values in this case remain stable, with C1 = 1pF and C2 = 20 pF. Here a similar change in resistance does not lead to an equivalent change in both semicircles, as a change in resistance affects the interaction with the capacitor in each RC subcircuit.
