Figure 3
From: A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
The measured C–V characteristics with standard y-axis and logarithmic y-axis: (a) sample 1, (b) sample 2, (c) sample 3, and (d) sample 4. When measuring C–V characteristics, different potentials are applied to gate and source respectively, and source and drain are not shorted. For open-gate devices, the capacitances of the two gates are measured separately and summed to obtain the capacitance shown in the figure. The effective widths of the open region under different gate bias calculated according to the C–V characteristics are also marked in the figure.
