Figure 6
From: A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
The calculated (a) additional polarization charge density for open-gate samples and various electron mobilities for (b) sample 2, (c) sample 3, and (d) sample 4 as a function of the gate bias. μDIS, μIFR, μAP, μPOP, μPCF and μTotal correspond to the electron mobility of DIS scattering, IFR scattering, AP scattering, POP scattering, PCF scattering, and total electron mobility, respectively.
