Table 1 The calculated maximum transconductance of samples 2, 3, and 4.
From: A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
gm,max (S) | |||
|---|---|---|---|
Sample 2 | Sample 3 | Sample 4 | |
VGS > − 4.5 V | 3.09 × 10−3 | 3.38 × 10−3 | 3.56 × 10−3 |
VGS ≤ − 4.5 V | 3.54 × 10−5 | 5.17 × 10−5 | 7.42 × 10−5 |
