Figure 5
From: The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
The electrical conductance, \({\mathrm{G}}_{\mathrm{e}}\), and the spin conductance, \({\mathrm{G}}_{\mathrm{s}}\), of the perfect (solid lines), Si-defected (dot-dashed lines), and C-defected (dashed lines) of junctions as a function of chemical potential for P (a and c) and AP (b and d) electrodes configurations.
