Figure 8
From: The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
The charge Seebeck coefficient, \({\mathrm{S}}_{\mathrm{c}}\), and the spin Seeebeck coefficient, \({\mathrm{S}}_{\mathrm{s}}\), of the perfect (solid lines), Si-defected (dot-dashed lines), C-defected (dashed lines) junctions as a function of chemical potential for P (a and c) and AP (b and d) electrodes configurations.
