Table 1 FET carrier density (nFET), Hall carrier density (nHall), coherence factor (α), FET carrier mobility (μFET) of the various SWCNT thin film devices studied in this work.

From: Hall effect in gated single-wall carbon nanotube films

Samples

nFET (cm−2)

nHall (cm−2)

α

μFET (cm2 V−1 s−1)

Metal

2.4 × 1015

7.0 × 1017

3.4 × 10–3

52

Semi

7.8 × 1014

3.1 × 1017

2.5 × 10–3

62

Mix

7.9 × 1014

1.1 × 1018

7.1 × 10–4

1.0 × 102

L-Mix

3.5 × 1014

7.5 × 1017

4.7 × 10–4

75

  1. Data taken at 200 K in the n-type region are shown.
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