Figure 11
From: Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
Enhancement of Id—Vg profiles of stacked Ge-nanosheet GAAFETs (Lch = 180 nm) by wafer bending. Current enhancement of 12% for p-FET and 7% for n-FET are obtained with compressive and tensile strains of 0.06%, respectively.
