Figure 3
From: Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
(a) TEM images showing misfit dislocations along the Ge/Si interface and the resulting threading dislocations across the Ge film; (b) enlarged micrographs with misfit dislocations at the Ge/Si interface showing the formation of a relaxed single-crystalline Ge(100) layer on the wafers.
