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Figure 1

From: Multimodal transistors as ReLU activation functions in physical neural network classifiers

Figure 1

source-gate overlap (SGO) and source-drain separation (d) regions are controlled by the current control gate (Gate 1), and channel gate (Gate 2), respectively19. (c) Simulated amorphous silicon (a-Si) MMT transfer characteristics showing Gate 1 (G1) sets drain current magnitude, while Gate 2 (G2) allows or blocks its flow without influencing its magnitude. (d) Simulated transfer characteristics for G2 further demonstrating that G2 does not influence charge injection processes and thus flatten once the channel is fully accumulated. (e) Output characteristics showing low voltage saturation with high output impedance, expected from contact-controlled devices.

The multimodal transistor (MMT). (a) Illustrative cross-section and (b) optical micrograph of a microcrystalline silicon (µ-Si) multimodal transistor (MMT). Charge dynamics in the

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