Table 1 Nomenclature in analytical and numerical developed models.

From: Picosecond pulsed laser illumination: an ultimate solution for photonic versus thermal processes’ contest in SOI photo-activated modulator

Sign

Definition

Sign

Definition

\(c\)

Specific heat

\(J_{n} , J_{p}\)

Electron and hole current density

\(D\)

Diffusion coefficient

\(n, p\)

Electron and hole concentration

\(E\)

Electrical field

\(x_{0}\)

V-groove position

\(E_{eh}\)

Average energy of electron–hole pair

\(N_{A}\)

Acceptors concentration

\(E_{ph}\)

Average optical energy for electron–hole pair creation

\(N_{D}\)

Donors concentration

\(P_{0}\)

Illumination power per unit area

\(R_{net}\)

Net recombination rate of charge carriers

\(G_{opt}\)

Optical generation rate

\(T\)

Temperature function

\(H_{J}\)

Joule heat generation rate

\(k\)

Thermal conductivity

\(H_{opt}\)

Optical heat generation rate

\(\rho\)

Mass density

\(H_{GR}\)

Recombination heat generation rate

\(\phi\)

Potential

\(\alpha\)

Absorption coefficient

\(\mu\)

Mobility coefficient