Table 2 Model’s parameters for the numerical solution.

From: Picosecond pulsed laser illumination: an ultimate solution for photonic versus thermal processes’ contest in SOI photo-activated modulator

Variable

Definition

Value

d1

Gate-groove distance

\(10\;\upmu {\text{m}}\)

d2

Groove-insulator distance

\(10 \;\upmu {\text{m}}\)

d3

Insulator thickness

\(150\;{\text{nm}}\)

d4

Insulator-gate distance

\(10\;\upmu {\text{m}}\)

Na

Acceptors concentration

\(10^{15} \;{\text{cm}}^{ - 3}\)

V0

Insulator voltage

\(1\;{\text{V}}\)

Power

Illumination power

\(\sim 1\;{\text{mW}} \)

AI

Illumination area

\(\sim 4\;{\text{mm}}^{2}\)

AV

V-groove illumination entrance area

\(\sim 84\;\upmu {\text{m}}^{2}\)

λ

Illumination wavelength

\(550\;{\text{nm}}\)

T0

Heat-sink temperature

\(300\;{\text{K}}\)