Figure 3 | Scientific Reports

Figure 3

From: Fabrication and temperature-dependent electrical characterization of a C-shape nanowire patterned by a DNA origami

Figure 3The alternative text for this image may have been generated using AI.

(a) SEM images of electrical contact pads and markers on \({\hbox {SiO}_2 / \hbox {Si}}\) substrates. The markers are laid out on a square lattcie which define the “writing” fields (green squares) of \({8}\,\upmu \hbox {m}\) x \({8}\,\upmu \hbox {m}\). (b), (c) Individual C-shape nanowires in between source and drain electrodes. Scale bars are \({100}\hbox { nm}\). (d), (e) Temperature dependent I-V characteristics from 4.2 K to RT of C-shape wires by biasing from \({-30} \hbox { mV}\) to \({-30} \hbox { mV}\). The x-axis labels are identical for (d), (e).

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