Figure 3
From: Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
(a) Room temperature confocal fluorescence map of a 10 ions/spot pattern after further cleaning and 400 °C anneal. Tick marks represent 5 µm. (b) Line cut of integrated emission counts vs. position. (c) Background-corrected second-order autocorrelation function \({g}^{\left(2\right)}\left(\Delta t\right)\) at room temperature from the spot circled in (a). (d) Histogram of emission counts for the 50 spots in the implantation pattern in (a).
