Figure 4
From: Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
(a) Energies of the ground state S = 3/2 spin states of V2 as a function of magnetic field along the c-axis, with arrows representing the ODMR transitions. (b) Room temperature ODMR of 5 × 5 µm square implanted at 1000 ions/spot (2.01 × 1014 ions/cm2) taken at three different magnetic fields along the growth axis. The average RF power is 7 dBm. (c,d) Room temperature ODMR of the (c) Li+ implanted 5 µm × 5 µm square and (d) a reference 2 MeV electron-irradiated sample at about 10 mT for a series of RF powers.
