Figure 3

(a) The I–V characteristics of the p-GeSe/n-MoSe₂ heterojunction diode at different gate voltages. (b) The corresponding semi-logarithmic plots of output characteristics. (c) The gate dependent rectification ratio of p-GeSe/n-MoSe₂ heterojunction diode. (d) Gate dependent ideality factor of p-GeSe/n-MoSe₂ heterojunction diode.