Figure 6
From: Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes

Simulated responsivities of a NP-PD device with a diameter of dNP = 300 nm (Fig. 1a, b) and illuminated with E0‖x and E0‖y using varying material and geometry parameters. Results are shown for (a) and (b) variations of the superstrate refractive index nsup at w = 100 nm and h = 50 nm, (c) and (d) variations of the NA geometry parameter w at h = 50 nm and nsup = 1.0, (e) and (f) variations of the geometry parameter h at w = 100 nm and nsup = 1.0. Field profiles E(x,y,z) for wavelengths indicated by the dashed lines are shown in the supplementary information.