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Figure 1

From: Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

Figure 1

Structural and chemical analyses of HfO2 films. (a) Grazing incidence X-ray diffraction (GIXRD) results after annealing at 600 °C for 20 s (LTA) and 800 °C for 1 s (HTA). (b) Enlarged GIXRD results near the orthorhombic (111) peaks. X-ray photoemission spectroscopy results near the Hf 4f peak for (c) LTA and (d) HTA films and O 1s peak for (e) LTA and (f) HTA films.

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