Figure 5
From: Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
Schematic diagram of orthorhombic HfO2 (a) without oxygen deficiency and (b) with 6.25% oxygen deficiency. (c) First-principles calculations of the energy landscape during single ferroelectric dipole flipping for 0% and 6.25% oxygen deficiency concentrations.
