Figure 1

(a) Atomic force micrograph of CVD MoS₂ on sapphire template shows a closed 3ML layer with islands of 4 and 5 monolayers distributed randomly. (b) Device schematic with global back-gate and top source/drain contacts. (c) Fabrication flow for the back-gated devices. (d) Optical micrograph showing the patterned MoS₂ channel with 10 nm thick Ni contacts. (e) Cross-TEM shows a fabricated device with L_cont = 13 nm and L_ch = 46 nm on 12 nm HfO₂. (f) Zoom-in of the channel region for another device showing 3 monolayer MoS₂ on nominal 4 nm HfO₂ (g) Transfer characteristics at a fixed V_DS = 1 V. Maximum drive current at V_GS = 3 V scales with L_ch saturating for short-channel devices. The plot shows L_ch = 34 nm, 44 nm, 50 nm, 70 nm, 100 nm, 200 nm, 300 nm, 500 nm, 1000 nm, 5000 nm.