Figure 4
RT-PL peak shift of threefold InGaN/GaN MWQs with different indium concentration and thicknesses in GaN NRds for excitation powers of P = 0.1 W cm−2, 1 W cm−2, 10 W cm−2. (a) Sample A. (b) Sample B. (c) Sample C. (d) Sample D.
Figure 4 | Scientific Reports
