Table 1 Composition, thickness of the different QWs of this study derived by XRD measurements and values of \({{E}_{0}}\), \({{B}_{m}}\) and κ for sample A, B, C and D.

From: Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Sample

A

B

C

D

QWs In composition

17

19

21

21

QWs thickness

3.5 nm

3.2 nm

2.1 nm

1.3 nm

\({{E}_{0}}\) (eV)

2.8

2.78

2.82

3.0

\({{B}_{m}}\) (eV)

0.32

0.42

0.34

–

κ−1 (nm)

27

22

19

–

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