Table 1 The substrate temperature during the Ga droplet nucleation and the subsequent arsenization of the samples, presented in this work as well as the GaAs island density of the samples.
From: Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
Sample | \(T,^{\circ }\hbox {C}\) | \(N,\,\hbox {cm}^{-2}\) | Comments |
|---|---|---|---|
T1 | 300 | (\(7.67\pm 1.15)\times 10^{10}\) | |
T2 | 350 | (\(1.83\pm 0.06)\times 10^{10}\) | |
T2b | 350 | (\(1.85\pm 0.09)\times 10^{10}\) | Arsenization after 30 minutes annealing |
T3 | 400 | \((2.27\pm 0.05)\times 10^{9}\) | |
T4 | 450 | \((7.17\pm 1.08)\times 10^{8}\) |
