Table 1 Electrical transport properties of Cu2O and Cu2O:Mg (5%) films, as-deposited and thermally annealed in air at 250 °C, 350 °C and 450 °C.

From: Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties

Thin films

Anneal. temp. (°C)

ρ (Ω cm)

μ (cm2 V−1 s−1)

p (cm−3)

EA1 (meV)

NA1 (cm−3)

EA2 (meV)

NA2 (cm−3)

NA–ND (cm−3)

Cu2O

–

93 ± 1

9.7 ± 0.1

6.1 × 1015 ± 0.1 × 1015

258

7.0 × 1017

–

–

6.0 × 1017

250

80 ± 1

8.4 ± 0.6

9.2 × 1015 ± 0.6 × 1015

249

9.5 × 1017

–

–

8.5 × 1017

350

155 ± 2

7.3 ± 0.4

5.6 × 1015 ± 0.2 × 1015

247

5.9 × 1017

–

–

4.9 × 1017

450

1650 ± 10

–

–

–

–

–

–

–

Cu2O:Mg

–

61.3 ± 0.4

2.4 ± 0.1

4.3 × 1016 ± 0.2 × 1016

251

4.0 × 1018

124

4.7 × 1016

4.0 × 1018

250

24.4 ± 0.2

2.8 ± 0.2

9.3 × 1016 ± 0.5 × 1016

251

7.7 × 1018

113

1.2 × 1017

7.7 × 1018

350

27.7 ± 0.1

2.7 ± 0.5

8.8 × 1016 ± 0.5 × 1016

251

6.3 × 1018

126

1.4 × 1017

6.3 × 1018

450

13.3 ± 0.1

2.3 ± 1

2.9 × 1017 ± 1.8 × 1017

251

9.5 × 1019

136

2.2 × 1017

9.5 × 1019

  1. Resistivity, mobility and charge carrier density values were determined at room temperature by Hall effect measurements. Ionization energies and concentrations of the two acceptor levels, as well as the difference between acceptor and donor concentrations are obtained from the fitting of temperature-dependent Hall carrier density.
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