Figure 5

(a) Resistivity of the C1-, P1-, and R1-based thin films on glass substrates obtained by NP-mist deposition in a low process temperature range from room temperature to 200 °C. SEM images of the surfaces of the (b) C1-, (c) P1-, and (d) R1-based ITO thin films prepared by the NP-mist deposition method after annealed at 150 °C. The scale bar shown in (b) is common to (c) and (d).