Figure 7
(a) Appearance of an ITO thin film (ca. 300 nm) on a PEN substrate (Q51-50, TOYOBO Co., Ltd., t = 50 μm) deposited by the NP-mist deposition method using P1. (b) Photos of the ITO thin films on PEN substrates (i) before and (ii) after bending. (c) Change in the resistivity with bending. (d) SEM images of the P1-based ITO thin films (i) before and (ii) after bending 10,000 times. The scale bar shown in (ii) is common to (i). (e) Transmittance spectra of the P1-based ITO thin film on a PEN substrate prepared by the NP-mist deposition method (background: the corresponding PEN film). (f) (i) SEM image and (ii) corresponding EDS mapping image of In ions for the P1-based thin film on a PEN substrate. The scale bar shown in (ii) is common to (i).
