Figure 3
(a) Semilogarithmic plot of the J–V characteristics of the fabricated photovoltaic and photoconductive UV photodetectors in dark and illuminated conditions. (b) J–V characteristics of the AZO/co-doped CuCrO2 p–n junction under 0.2, 0.5 and 1.2 mW/cm2 illumination intensities and the zoomed curve around zero biasing (inset). (c) Current–time (I–t) measurement of the photovoltaic and photoconductive photodetectors under periodic illumination by a 385 nm wavelength and 0.2 mW/cm2 intensity LED. (d) Transient behavior of the AZO layer and (e) the fabricated p–n junction under UV illumination. The dashed lines represent the 10% and 90% of maximum values in which the rise and decay times are measured in between, respectively. (f) Spectral responsivity of the AZO photoconductive and AZO/co-doped CuCrO2 photovoltaic photodetectors.
