Figure 7 | Scientific Reports

Figure 7

From: Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics

Figure 7

Long-term potentiation (LTP) and depression (LTD) characteristics of (a) single IGZO and (b) bi-layer IGZO/ZnO memristors. The applied positive/negative pulses were 50 for a single IGZO and 100 for bi-layer IGZO/ZnO memristors, respectively, and the current was read after each stimulation pulse was applied. The linearity and symmetricity of the LTP and LTD characteristics for bi-layer IGZO/ZnO memristor show more improved linearity than that for a single IGZO memristor.

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