Figure 3
The theoretical modeling and output characteristics of 2DHG diamond MOSFET positive surface charge sheet model (simulation) of 5 × 1011 cm-2 with a boron doping concentration of 4 × 1015 cm-3 and various nitrogen doping layer at the room temperature. (a) The maximum drain current density is simulated at IDS Max = − 52 mA/mm with nitrogen concentration of 1 × 1016 cm-3 and the Vth is at − 3 eV. (b) IDS Max = − 33 mA/mm with nitrogen concentration of 2 × 1016 cm-3 and the Vth is at − 3 eV. (c) IDS Max = − 19 mA/mm with nitrogen concentration of 5 × 1016 cm-3 and the Vth is at − 3 eV. (d) IDS Max = − 5 mA/mm with nitrogen concentration of 1 × 1017 cm-3 and the Vth is at − 3 eV. (e) IDS Max = − 5 mA/mm with nitrogen concentration of 2 × 1017 cm-3 and the Vth is at − 6 eV. (f) IDS Max = − 2 mA/mm with nitrogen concentration of 5 × 1017 cm-3 and the Vth is at − 6 eV.
