Figure 4
The simulated output characteristics of C−H diamond MOSFET positive interface charge model of 1 × 1011 cm-2 with boron doping concentration 2 × 1015 cm-3 and nitrogen doping layer in a concentration of 2 × 1016 cm-3 at room temperature. (a) The diagram of simulated IDS−VDS characteristics, in which the drain density IDS Max = − 290 mA/mm when VDS is in the range of − 30 V, and VG varies in the ranges from − 40 V to 8 V with a voltage step of 4 V, corresponding to the experimental work (b). (b) The diagram of experimented IDS−VDS characteristics of SiO2/diamond MOSFET showed the maximum drain current obtained at IDS MAX=− 305.0 mA/mm when drain voltage was fixed at − 30 V, VGS was varied from − 40 V to 0 V with a voltage step of 4 V. (c) The simulation of the Vth = − 3.5 V at drain voltage VDS = − 0.5 V corresponds to (a) indicating the normally-off operation fitting with Fig. 1c. (d). The plots of simulated results correspond to mobility varied at 100 cm2/Vs when transconductance of device gm = 0.4 mS/mm.
