Figure 5
The simulated output characteristics of C–H diamond MOSFET in a negative interface charge model. (a) When applied negative interface charge at Qf = −1 × 1012 cm-2 with nitrogen doping layer at 1016 cm-3, the maximum drain current density is simulated at IDS Max = − 331 mA/mm with VDS of − 30 V, and the gate voltage VGS was varied in the ranges from − 40 V to 8 V with a voltage step of 4 V. (b) When applied surface charge at Qf = − 5 × 1011 cm-2, the maximum drain current density is simulated at IDS Max = − 314 mA/mm with VDS of − 30 V, and the gate voltage VGS was varied in the ranges from − 40 V to 8 V with a voltage step of 4 V. (c) Threshold voltage simulated at Vth = 5 V corresponding to (a) indicating the normally-on operation at VDS = − 0.5 V. (d) Threshold voltage simulated at Vth = 1 V corresponding to (b) indicating the normally-on operation at VDS = − 0.5 V. (e) The transconductance of device gm = 0.43 mS/mm corresponding to (a). (f) The transconductance of device gm = 0.4 mS/mm corresponding to (b).
